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Abstract:

The relationship between the chemical composition of lead halide perovskite materials and their crystal and electronic structure is not yet sufficiently understood, despite its fundamental importance. Here, we determine the crystal and electronic structure of cesium lead bromide (CsPbBr₃) while deliberately varying the cesium content. At substoichiometric concentrations of cesium, there are large variations in the frontier electronic structure of CsPbBr₃ with only small variations in Cs content. We observe a critical point after which large variations in the chemical composition of CsPbBr₃ result in comparably small changes in valence and conduction band energies. This behavior is starkly different from that of traditional semiconductors, such as InGaAs and GaInP, and demonstrates an impressive energetic tolerance of CsPbBr₃ to large changes in its stoichiometry. This observation helps us to understand why a broad range of relatively uncontrolled, simple processing methodologies can deliver highly functional metal halide perovskite thin films.

Abstract:

Charge extraction by electron transport layers (ETLs) plays a vital role in improving the performance of perovskite solar cells (PSCs). Here, PSCs with four different types of ETLs, such as SnO2, amorphous‐Zn2SnO4 (am‐ZTO), am‐ZTO/SnO2, and SnO2/am‐ZTO, are successfully synthesized. The interface recombination behavior and the charge transport properties of the devices affected by four types of ETLs are systematically investigated. For dual am‐ZTO/SnO2 ETLs, compact am‐ZTO ETL prepared by the pulsed laser deposition method provides a dense physical contact with FTO than the spin coating films, decreasing leakage current and improving charge collection at the interface of ETL/FTO. Moreover, dual am‐ZTO/SnO2 ETLs lead to large free energy difference (ΔG), improving electron injection from perovskite to ETLs. One additional electron pathway from perovskite to am‐ZTO is formed, which can also improve electron injection efficiency. A power conversion efficiency of 20.04% and a stabilized efficiency of 19.17% are achieved for the device based on dual am‐ZTO/SnO2 ETLs. Most importantly, the devices are fabricated at a low temperature of 150 °C, which offers a potential method for large‐scale production of PSCs, and paves the way for the development of flexible PSCs. It is believed that this work provides a strategy to design ETLs via controlling ΔG and interface contact to improve the performance of PSCs.