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Abstract:

The performance and scalability of perovskite solar cells (PSCs) based on 3D formamidinium lead triiodide (FAPbI3) absorber are often hindered by defects at the surface and grain boundaries of the perovskite. To address this, the study demonstrates the use of pyrrolidinium iodide for the in situ formation of an energetically aligned 1D pyrrolidinium lead triiodide (PyPbI3) capping layer over the 3D FAbI3 perovskite. The thermodynamically stable PyPbI3 perovskitoids, formed through cation exchange reactions, effectively reduce surface and grain boundary defects in the FAPbI3 perovskite. In addition to improved phase stability, the resulting 1D/3D perovskite film forms a cascade energy band alignment with the other functional layers in PSCs, enabling a barrier‐free interfacial charge transport. With a maximum power conversion efficiency (PCE) of ≈23.1% and ≈20.7% at active areas of 0.09 and 1.05 cm2, respectively, the 1D/3D PSCs demonstrate excellent performance and scalability. Leveraging this improved scalability, the study has successfully developed a mechanically‐scribed 1D/3D perovskite mini‐module with an unprecedentedly high PCE of ≈20.6% and a total power output of ≈270 mW at an active area of ≈13.0 cm2. The 1D/3D multi‐dimensional perovskite film developed herein holds great promise for producing low‐cost, high‐performance perovskite photovoltaics at both the cell and module levels.

Abstract:

This study explores the potential of copper-doped nickel oxide (Cu:NiO) as a hole transport layer (HTL) in flexible photovoltaic (PV) devices using a combined first-principles and finite element analysis approach. Density functional theory (DFT) calculations reveal that Cu doping introduces additional states in the valence band of NiO, leading to enhanced charge transport. Notably, Cu:NiO exhibits a direct band gap (reduced from 3.04 eV in NiO to 1.65 eV in the stable supercell structure), facilitating the efficient hole transfer from the active layer. Furthermore, the Fermi level shifts towards the valence band in Cu:NiO, promoting hole mobility. This translates to an improved photovoltaic performance, with Cu:NiO-based HTLs achieving ~18% and ~9% power conversion efficiencies (PCEs) in perovskite and poly 3-hexylthiophene: 1-3-methoxycarbonyl propyl-1-phenyl 6,6 C 61 butyric acid methyl ester (P3HT:PCBM) polymer solar cells, respectively. Finally, a finite element analysis demonstrates the potential of these composite HTLs with Poly 3,4-ethylene dioxythiophene)—polystyrene sulfonate (PEDOT:PSS) in flexible electronics design and the optimization of printing processes. Overall, this work highlights Cu:NiO as a promising candidate for high-performance and flexible organic–inorganic photovoltaic cells.

Abstract:

As perovskite photovoltaics stride towards commercialization, reverse bias degradation in shaded cells that must current match illuminated cells is a serious challenge. Previous research has emphasized the role of iodide and silver oxidation, and the role of hole tunnelling from the electron-transport layer into the perovskite to enable the flow of current under reverse bias in causing degradation. Here we show that device architecture engineering has a significant impact on the reverse bias behaviour of perovskite solar cells. By implementing both a ~35-nm-thick conjugated polymer hole transport layer and a more electrochemically stable back electrode, we demonstrate average breakdown voltages exceeding −15 V, comparable to those of silicon cells. Our strategy for increasing the breakdown voltage reduces the number of bypass diodes needed to protect a solar module that is partially shaded, which has been proven to be an effective strategy for silicon solar panels.

Abstract:

Lattice dynamics are critical to photovoltaic material performance, governing dynamic disorder, hot-carrier cooling, charge-carrier recombination, and transport. Soft metal-halide perovskites exhibit particularly intriguing dynamics, with Raman spectra exhibiting an unusually broad low-frequency response whose origin is still much debated. Here, we utilize ultra-low frequency Raman and infrared terahertz time-domain spectroscopies to provide a systematic examination of the vibrational response for a wide range of metal-halide semiconductors: FAPbI3, MAPbI x Br3–x , CsPbBr3, PbI2, Cs2AgBiBr6, Cu2AgBiI6, and AgI. We rule out extrinsic defects, octahedral tilting, cation lone pairs, and “liquid-like” Boson peaks as causes of the debated central Raman peak. Instead, we propose that the central Raman response results from an interplay of the significant broadening of Raman-active, low-energy phonon modes that are strongly amplified by a population component from Bose–Einstein statistics toward low frequency. These findings elucidate the complexities of light interactions with low-energy lattice vibrations in soft metal-halide semiconductors emerging for photovoltaic applications.