Unusual Behaviour of the DX-Centre in GaAs:Ge
Japanese Journal of Applied Physics IOP Publishing 32:S1 (1993) 218
DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE
SEMICOND SCI TECH 8:1 (1993) S380-S385
PIEZOELECTRIC EFFECTS IN SUPERLATTICES
SEMICOND SCI TECH 8:1 (1993) S367-S372
CYCLOTRON-RESONANCE OF HIGH-MOBILITY GAAS/ALGAAS(311) 2DHGS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 8:7 (1993) 1465-1469
HIGH-FIELD MAGNETORESISTANCE IN GAAS/GA0.7AL0.3AS HETEROJUNCTIONS ARISING FROM ELASTIC AND INELASTIC-SCATTERING
PHYSICAL REVIEW B 48:8 (1993) 5457-5468