INTRINSIC QUANTUM HALL-EFFECT IN INAS/GA1-XINXSB CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS
SURF SCI 305:1-3 (1994) 156-160
One dimensional transport and gating of InAs/GaSb structures
Superlattices and Microstructures 15:1 (1994) 41-45
Abstract:
Semimetallic InAs/GaSb structures are known to contain simultaneously both two dimensional electrons in the InAs and two dimensional holes in the GaSb layers. Following successful anodisation of undoped GaSb, we describe transport measurements performed on a wide area gated sample and also a single quantum point contact. In the large area gated sample, the electron density increases and the hole density decreases when a positive gate voltage is applied. Under negative bias, an additional layer of holes is created at the interface between the insulating and GaSb capping layers, which is confirmed by self-consistent modelling of the band profile under external bias. The conductance of the point contact is found to exhibit quantised values. PACS: 72.20My, 23.80Ey, 73.40Qv. 漏 1994 Academic Press. All rights reserved.AN OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDY OF BULK GAAS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 9:2 (1994) 198-206
COLLAPSE OF HIGH-FIELD MAGNETOPHONON RESONANCE IN GAAS-GAALAS HETEROJUNCTIONS
PHYSICAL REVIEW LETTERS 73:4 (1994) 589-592
EFFECTIVE-MASS AND QUANTUM LIFETIME IN A SI/SI0.87GE0.13/SI 2-DIMENSIONAL HOLE GAS
APPLIED PHYSICS LETTERS 64:3 (1994) 357-359