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CMP
Credit: Jack Hobhouse

Robin Nicholas

Emeriti

Sub department

  • Condensed Matter Physics
Robin.Nicholas@physics.ox.ac.uk
Telephone: 01865 (2)72250
Clarendon Laboratory, room 053,151
  • About
  • Publications

A far infrared modulated photoluminescence (FIRM-PL) study of cyclotron resonance in a 2D electron gas in GaAs/AlxGa1-xAs heterojunctions

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14:9 (1999) 768-774

Authors:

CC Chang, RJ Nicholas

Intersubband transitions in InAs GaSb semimetallic superlattices

PHYSICAL REVIEW B 59:16 (1999) 10785-10791

Authors:

AJL Poulter, M Lakrimi, RJ Nicholas, NJ Mason, PJ Walker

Optical probing of the minigap in InAs/GaSb superlattices

PHYSICAL REVIEW B 60:3 (1999) 1884-1891

Authors:

AJL Poulter, M Lakrimi, RJ Nicholas, NJ Mason, PJ Walker

Self-assembled InSb quantum dots grown on GaSb:: A photoluminescence, magnetoluminescence, and atomic force microscopy study

APPLIED PHYSICS LETTERS 74:14 (1999) 2041-2043

Authors:

E Alphand茅ry, RJ Nicholas, NJ Mason, B Zhang, P M枚ck, GR Booker

Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL

INST PHYS CONF SER (1999) 133-136

Authors:

P Mock, GR Booker, E Alphandery, RJ Nicholas, NJ Mason

Abstract:

Transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) with and without additional magnetic fields (magneto-PL) were employed to study metal organic vapour phase epitaxy (MOVPE) grown, self-assembled InSb rich quantum dots (QDs) embedded in InAs and GaSb matrices. Depending on the growth conditions, coherently strained, partly relaxed, and completely relaxed InSb rich agglomerates were observed by means of TEM; AFM delivered more reliable QD number densities and accurate heights of InSb islands on GaSb. For the case of InSb embedded in GaSb, PL showed QD emission at 1.69 mum and wetting layer (WL) emission at 1.61 mum.

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