Robin Nicholas: Publications

Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells

JOURNAL OF PHYSICS-CONDENSED MATTER 13:10 (2001) 2317-2329

Authors:

B Urbaszek, C Morhain, C Bradford, CB O'Donnell, SA Telfer, X Tang, A Balocchi, KA Prior, BC Cavenett, CM Townsley, RJ Nicholas

Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

PHYSICAL REVIEW B 64:8 (2001) ARTN 081203

Authors:

PA Shields, RJ Nicholas, FM Peeters, B Beaumont, P Gibart

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation

SOLID STATE COMMUNICATIONS 117:11 (2001) 649-654

Authors:

SL Tyan, YG Lin, FY Tsai, CP Lee, PA Shields, RJ Nicholas

Insulating states of a 2-dimensional electron-hole system in high magnetic field

SPRINGER PROC PHYS 87 (2001) 895-896

Authors:

K Takashina, RJ Nicholas, B Kardynal, N Mason, D Maude, JC Portal

Abstract:

We find that an InAs/GaSb based electron-hole system exhibits insulating behaviour when the numbers of occupied electron and hole Landau levels are equal. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display reproducible fluctuations. A comparison with measurements made on a Corbino disc reveals that these features occur due to conduction at the mesa edge. We propose a simple model based on edge states.

Magnetophotoluminescence of GaN/Al_xGa_1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319

PHYSICAL REVIEW B 63:24 (2001) ARTN 245319

Authors:

PA Shields, RJ Nicholas, N Grandjean, J Massies

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Robin Nicholas

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Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells

Authors:

Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

Authors:

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation

Authors:

Insulating states of a 2-dimensional electron-hole system in high magnetic field

Authors:

Abstract:

Magnetophotoluminescence of GaN/Al_xGa_1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319

Authors:

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Robin Nicholas

Sub department

Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells

Authors:

Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

Authors:

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation

Authors:

Insulating states of a 2-dimensional electron-hole system in high magnetic field

Authors:

Abstract:

Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319

Authors:

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Magnetophotoluminescence of GaN/Al_xGa_1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319