Prof Yen-Hung Lin: Publications

Exploring Two‐Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next‐Generation, High‐Performance, Thin‐Film Transistor Technologies

Small Wiley 11:41 (2015) 5472-5482

Authors:

John G Labram, Yen-Hung Lin, Thomas D Anthopoulos

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Advanced Science Wiley 2:7 (2015) 1500058

Authors:

Yen-Hung Lin, Hendrik Faber, John G Labram, Emmanuel Stratakis, Labrini Sygellou, Emmanuel Kymakis, Nikolaos A Hastas, Ruipeng Li, Kui Zhao, Aram Amassian, Neil D Treat, Martyn McLachlan, Thomas D Anthopoulos

Signatures of Quantized Energy States in Solution‐Processed Ultrathin Layers of Metal‐Oxide Semiconductors and Their Devices

Advanced Functional Materials Wiley 25:11 (2015) 1727-1736

Authors:

John G Labram, Yen‐Hung Lin, Kui Zhao, Ruipeng Li, Stuart R Thomas, James Semple, Maria Androulidaki, Lamprini Sygellou, Martyn McLachlan, Emmanuel Stratakis, Aram Amassian, Thomas D Anthopoulos

Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis

ACS Applied Materials & Interfaces American Chemical Society (ACS) 7:1 (2015) 782-790

Authors:

Hendrik Faber, Yen-Hung Lin, Stuart R Thomas, Kui Zhao, Nikos Pliatsikas, Martyn A McLachlan, Aram Amassian, Panos A Patsalas, Thomas D Anthopoulos

Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors

Proceedings of the International Display Workshops 3 (2015) 1736-1739

Authors:

YH Lin, K Zhao, R Li, A Amassian, TD Anthopoulos

Abstract:

We report on metal oxide superlattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gaslike systems formed at the oxide-oxide heterointerfaces.

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Prof Yen-Hung Lin

Sub department

Exploring Two‐Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next‐Generation, High‐Performance, Thin‐Film Transistor Technologies

Authors:

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Authors:

Signatures of Quantized Energy States in Solution‐Processed Ultrathin Layers of Metal‐Oxide Semiconductors and Their Devices

Authors:

Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis

Authors:

Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors

Authors:

Abstract:

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Prof Yen-Hung Lin

Sub department

Exploring Two‐Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next‐Generation, High‐Performance, Thin‐Film Transistor Technologies

Authors:

High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

Authors:

Signatures of Quantized Energy States in Solution‐Processed Ultrathin Layers of Metal‐Oxide Semiconductors and Their Devices

Authors:

Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis

Authors:

Exploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors

Authors:

Abstract:

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