p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells
Advanced Functional Materials Wiley 28:31 (2018)
Nanocrystalline silicon oxide interlayer in monolithic perovskite/silicon heterojunction tandem solar cells with total current density >39 mA/cm2
Institute of Electrical and Electronics Engineers (IEEE) 00 (2018) 2627-2630
Electron mobility enhancement in solution-processed low-voltage In2O3 transistorsvia channel interface planarization
AIP ADVANCES 8:6 (2018) ARTN 065015
Low-voltage solution-processed hybrid light-emitting transistors
ACS Applied Materials and Interfaces American Chemical Society 10:22 (2018) 18445-18449
Abstract:
We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10–2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
npj Flexible Electronics Springer Nature 2:1 (2018) 11