Prof Hariom Jani: Publications

Computing with rust

Where’s the very last place you would look if you wanted a new material to make computer memory? The compost heap or the scrap yard, probably. So who came up with the idea of using rust? Singapore’s Hariom Jani did. And he’s here to tell you it’s the futu

Erratum: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Nature Materials Springer Nature 17:1 (2018) 103-103

Authors:

Sreetosh Goswami, Adam J Matula, Santi P Rath, Svante Hedström, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A Nijhuis, Jens Martin, Sreebrata Goswami, Victor S Batista, T Venkatesan

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Nature Materials Springer Nature 16:12 (2017) 1216-1224

Authors:

Pressure dependence of resistivity and magnetoresistance in Pr-doped La0.7Ca0.3MnO3

Journal of Applied Physics AIP Publishing 113:17 (2013) 17d721

Authors:

HK Jani, DV Maheswar Repaka, R Mahendiran

Ab initio study of the effects of pressure and strain on electron–phonon coupling in IV and III–V semiconductors

physica status solidi (b) Wiley 250:4 (2013) 716-720

Authors:

Jelena Sjakste, Nathalie Vast, Hariom Jani, Sergey Obukhov, Valeriy Tyuterev

51��

Prof Hariom Jani

Research theme

Sub department

Computing with rust

Erratum: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Authors:

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Authors:

Pressure dependence of resistivity and magnetoresistance in Pr-doped La0.7Ca0.3MnO3

Authors:

Ab initio study of the effects of pressure and strain on electron–phonon coupling in IV and III–V semiconductors

Authors:

FIND US

CONTACT US

51�������

Prof Hariom Jani

Research theme

Sub department

Research groups

Computing with rust

Erratum: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Authors:

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Authors:

Pressure dependence of resistivity and magnetoresistance in Pr-doped La0.7Ca0.3MnO3

Authors:

Ab initio study of the effects of pressure and strain on electron–phonon coupling in IV and III–V semiconductors

Authors:

51��