A sustainable bias-free photoelectrochemical system for CO2 reduction into formate coupled with aldehyde synthesis

(2025)

Authors:

Madasamy Thangamuthu, Emerson Kohlrausch, Tara M Lemercier, Tom Burwell, Matthew Young, Jesum Alves Fernandes, Andrei Khlobystov

Impact of Charge Transport Layers on the Structural and Optoelectronic Properties of Coevaporated Cu 2 AgBiI 6

ACS Applied Materials & Interfaces American Chemical Society 17:28 (2025) 40363-40374

Authors:

Jae Eun Lee, Marcello Righetto, Benjamin WJ Putland, Siyu Yan, Joshua RS Lilly, Snigdha Lal, Heon Jin, Nakita K Noel, Michael B Johnston, Henry J Snaith, Laura M Herz

Abstract:

The copper鈥搒ilver鈥揵ismuth鈥搃odide compound Cu2AgBiI6 has emerged as a promising lead-free and environmentally friendly alternative to wide-bandgap lead-halide perovskites for applications in multijunction solar cells. Despite its promising optoelectronic properties, the efficiency of Cu2AgBiI6 is still severely limited by poor charge collection. Here, we investigate the impact of commonly used charge transport layers (CTLs), including poly颅[bis颅(4-phenyl)颅(2,4,6-trimethylphenyl)颅amine] (PTAA), CuI, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), and SnO2, on the structural and optoelectronic properties of coevaporated Cu2AgBiI6 thin films. We reveal that while organic transport layers, such as PTAA and PCBM, form a relatively benign interface, inorganic transport layers, such as CuI and SnO2, induce the formation of unintended impurity phases within the CuI鈥揂gI鈥揃iI3 solid solution space, significantly influencing structural and optoelectronic properties. We demonstrate that identification of these impurity phases requires careful cross-validation combining absorption, X-ray diffraction and THz photoconductivity spectroscopy because their structural and optoelectronic properties are very similar to those of Cu2AgBiI6. Our findings highlight the critical role of CTLs in determining the structural and optoelectronic properties of coevaporated copper鈥搒ilver鈥揵ismuth鈥搃odide thin films and underscore the need for advanced interface engineering to optimize device efficiency and reproducibility.

Ultrafast Nanoscopy of Carrier Dynamics and Nanoscale Morphology in Metal Halide Perovskites

Institute of Electrical and Electronics Engineers (IEEE) 00 (2025) 1-1

Authors:

Svenja Nerreter, Martin Zizlsperger, Qimu Yuan, Kilian B Lohmann, Fabian Sandner, Felix Schiegl, Christian Meineke, Yaroslav A Gerasimenko, Laura M Herz, Thomas Siday, Markus A Huber, Michael B Johnston, Rupert Huber

Abstract:

The rise of metal halide perovskites has prompted a revolution in optoelectronics research [1]. Yet a comprehensive understanding of the vertical charge transport that underlies the soaring efficiencies of perovskite-based solar cells has remained challenging owing to the materials' nanocrystalline structure [2] and competing crystal phases [3]. Here, we simultaneously probe the intrinsic out-of-plane charge-carrier diffusion and the nanoscale morphology by pushing depth-sensitive terahertz near- field nano-spectroscopy [4] to extreme subcycle timescales [5]. Evanescent terahertz fields at the apex of a metallic tip probe ultrafast dynamics of photocarriers in $\text{FA}_{0}.{}_{83}\text{Cs}_{0.17}\text{Pb}(\mathrm{I}_{1}{}_{-\mathrm{x}}\mathrm{C}1_{\mathrm{x}})_{3}$ films with nanoscale spatial resolution (Fig. 1 a). By analysing characteristic phonon signatures in the spectral response, we distinguish domains of the photo active cubic $\alpha$ -phase from the trigonal 未-phase and $\text{PbI}_{2}$ nano-islands (Fig. 1 b). To examine the impact of these nanoscale inhomogeneities on carrier dynamics, we monitor the peak pump-induced signal as a function of pump delay time $t_{\mathrm{p}}$ (Fig. 1c). Notably, the full pump-induced waveforms at different $t_{\mathrm{p}}$ (Fig. 1d) show a deeply subcycle time shift $\Delta t$, which can be microscopically linked to a diffusion-driven change in the vertical carrier distribution with $t_{\mathrm{r}}$ (Fig. 1e, inset). Com-bining a straightforward rate equation model with the finite-dipole model, we extract the evolution of the out-of-plane carrier density profile from $\Delta t$ (Fig. 1e). Mapping the out-of-plane diffusion coefficient $D$ along a line across different grains, including $\alpha$ -phase grains and $\text{PbI}_{2}$ contaminations, we find a homogeneous value of $D=(0.2\pm 0.1)\ \text{cm}^{2}\mathrm{s}^{-1}$, which is surprisingly immune to compositional and structural variations (Fig. 1 f). This robustness of vertical diffusion may contribute to the exceptional performance of perovskite-based devices. Linking in situ carrier transport with nanoscale morphology and chemical composition could introduce a paradigm shift for the analysis and optimization of next-generation optoelectronics that are based on nanocrystalline materials.

Large-Area Monocrystalline Copper Microflake Synthesis

The Journal of Physical Chemistry C American Chemical Society 129:25 (2025) 11574-11582

Authors:

Elif Nur Dayi, Diotime Pellet, Priscila Vensaus, Fatemeh Kiani, Alan R Bowman, Omer Can Karaman, Giulia Tagliabue

Abstract:

Copper is one of the most extensively studied materials for energy conversion and catalytic systems, with a wide range of other applications, from nanophotonics to biotechnology. However, existing synthesis methods are limited with many undesirable byproducts and poorly defined morphologies. Here, we report an on-substrate wet synthesis approach that yields purely metallic and monocrystalline Cu microflakes with an exposed (111) crystalline surface. By systematically studying the growth mechanism, we achieve unprecedented sizes of more than 130 mu m, which is 2 orders of magnitude larger than reported in most previous studies, along with high aspect ratios of over 400. Furthermore, we show significantly higher stability against oxidation provided by the halide adlayer, which also eliminates the need for any organic surfactants in the synthesis. Overall, our facile synthesis approach delivers an exciting avenue for the emerging fields of catalysis and nanophotonics.LNE

Ruddlesden鈥揚opper Defects Act as a Free Surface: Role in Formation and Photophysical Properties of CsPbI 3

Advanced Materials Wiley (2025) 2501788

Authors:

Weilun Li, Qimu Yuan, Yinan Chen, Joshua RS Lilly, Marina R Filip, Laura M Herz, Michael B Johnston, Joanne Etheridge

Abstract:

The perovskite semiconductor, CsPbI3, holds excellent promise for solar cell applications due to its suitable bandgap. However, achieving phase鈥恠table CsPbI3 solar cells with high power conversion efficiency remains a major challenge. Ruddlesden鈥揚opper (RP) defects have been identified in a range of perovskite semiconductors, including CsPbI3. However, there is limited understanding as to why they form or their impact on stability and photophysical properties. Here, the prevalence of RP defects is increased with increased Cs鈥恊xcess in vapor鈥恉eposited CsPbI3 thin films while superior structural stability but inferior photophysical properties are observed. Significantly, using electron microscopy, it is found that the atomic positions at the planar defect are comparable to those of a free surface, revealing their role in phase stabilization. Density functional theory (DFT) calculations reveal the RP planes are electronically benign, however, antisites observed at RP turning points are likely to be malign. Therefore it is proposed that increasing RP planes while reducing RP turning points offers a breakthrough for improving both phase stability and photophysical performance. The formation mechanism revealed here can apply more generally to RP structures in other perovskite systems.