Quantum Optoelectronics

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Femtosecond luminescence of semiconductor nanostructures

Optica Publishing Group (1997) qthd.2

Authors:

B Deveaud, S Haacke, M Hartig, R Ambigapathy, I Bar Joseph, RA Taylor

Abstract:

Luminescence has been quite widely used for the study of semiconductor nanostructures, and more especially time resolved luminescence, due to the ease to get a luminescence signal. The interpretation of the results however is sometimes quite complex, and one generally finds that some care has to be taken for the results to be meaningful. In particular, the homogeneity of the excited density over the detected luminescence signal is a quite important parameter, also it is often desirable to work at the lowest possible densities.

Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence

SUPERLATTICES AND MICROSTRUCTURES 21:1 (1997) 77-83

Authors:

M Hartig, S Haacke, RA Taylor, L Rota, B Deveaud

Relaxation Oscillations in the Gain Recovery of Gain-Clamped Semiconductor Optical Amplifiers: Simulation and Experiments

Optica Publishing Group (1997) sd14

Authors:

JL Pleumeekers, T Hessler, S Haacke, M-A Dupertuis, PE Selbmann, B Deveaud, RA Taylor, T Ducellier, P Doussi猫re, M Bachmann, JY Emery

Resonant femtosecond emission from quantum well excitons: The role of Rayleigh scattering and luminescence

PHYSICAL REVIEW LETTERS 78:11 (1997) 2228-2231

Authors:

S Haacke, RA Taylor, R Zimmermann, I BarJoseph, B Deveaud

Exciton recombination dynamics in ZnCdSe/ZnSe quantum wells

J CRYST GROWTH 159:1-4 (1996) 822-825

Authors:

RA Taylor, RA Adams, JF Ryan, RM Park

Abstract:

We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.