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Abstract:

2D-layered transition metal chalcogenides are useful semiconductors for a wide range of opto-electronic applications. Their similarity as layered structures offers exciting possibility to modify their electronic properties by creating new heterojunction assemblies from layer-by-layer restacking of individual monolayer sheets, however, the lack of specific interaction between these layers could induce phase segregation. Here, we employed a chemical method using n-BuLi to exfoliate MoS₂ and In₂Se₃ into their monolayer-containing colloids in solution. The bulky Se atoms can be selectively leached from In₂Se₃ during Li treatment which gives positively charged surface monolayers in neutral pH whereas the strong polarization of Mo–S with moderate S leaching gives a negatively charged surface. Specific interlayer electrostatic attraction during their selective assembly gives a controllable atomic AB-type of layer stacking as supported by EXAFS, STEM with super-EDX mapping, TAS/TRPL and DFT calculations. Using this simple but inexpensive bottom-up solution method, a new photocatalyst assembled from layers for photo water splitting can be tailor-made with high activity.

Abstract:

Abstract:

Experimental research data collected in laboratories at the Clarendon Laboratory, 2020-2022.

Abstract:

We demonstrate that a two-level system, in form of an InGaN quantum dot, can only be efficiency excited using an odd number of photons (1 or 3) while resonant two-photon excitation is strongly suppressed.

Abstract:

We demonstrate that a two-level system, in form of an InGaN quantum dot, can only be efficiency excited using an odd number of photons (1 or 3) while resonant two-photon excitation is strongly suppressed.