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Abstract:

2D halide perovskites are among intensely studied materials platforms profiting from solution-based growth and chemical flexibility. They feature exceptionally strong interactions among electronic, optical, as well as vibrational excitations and hold a great potential for future optoelectronic applications. A key feature for these materials is the occurrence of structural phase transitions that can impact their functional properties, including the electronic band gap and optical response dominated by excitons. However, to what extent the phase transitions in 2D perovskites alter the fundamental exciton properties remains barely explored so far. Here, we study the influence of the phase transition on both exciton binding energy and exciton diffusion, demonstrating their robust nature across the phase transition. These findings are unexpected in view of the associated substantial changes of the free carrier masses, strongly contrast broadly considered effective mass and drift-diffusion transport mechanisms, highlighting the unusual nature of excitons in 2D perovskites.

Abstract:

Mixed-halide perovskites offer ideal bandgaps for tandem solar cells, but photoinduced halide segregation compromises photovoltaic device performance. This study explores the influence of a hole-transport layer, necessary for a full device, by monitoring halide segregation through in situ, concurrent X-ray diffraction and photoluminescence measurements to disentangle compositional and optoelectronic changes. This work demonstrates that top coating FA0.83Cs0.17Pb(Br0.4I0.6)3 perovskite films with a poly(triaryl)amine (PTAA) hole-extraction layer surprisingly leads to suppression of halide segregation because photogenerated charge carriers are rapidly trapped at interfacial defects that do not drive halide segregation. However, the generation of iodide-enriched regions near the perovskite/PTAA interface enhances hole back-transfer from the PTAA layer through improved energy level offsets, increasing radiative recombination losses. It is further found that while passivation with a piperidinium salt slows halide segregation in perovskite films, the addition of a PTAA top-coating accelerates such effects, elucidating the specific nature of trap types that are able to drive the halide segregation process. This work highlights the importance of selective passivation techniques for achieving efficient and stable wide-bandgap perovskite photovoltaic devices.

Abstract:

Colour-tuned phosphors are promising for advanced security applications such as multi-modal anti-counterfeiting and data encryption. The practical adoption of colour-tuned phosphors requires these materials to be responsive to multiple stimuli (e.g., excitation wavelength, excitation waveform, and temperature) and exhibit excellent materials stability simultaneously. Here we report germanium silicon oxide (GSO) - a heavy-metal-free inorganic phosphor - that exhibits colour-tuned ultra-long phosphorescence and delayed fluorescence across a broad temperature range (300 - 500 K) in air. We developed a sol-gel processing strategy to prepare amorphous oxides containing homogeneously dispersed Si and Ge atoms. The co-existence of Ge and Si luminescent centres (LC) leads to an excitation-dependent luminescence change across the UV-to-visible region. GSO exhibits Si LC-related ultra-long phosphorescence at room-temperature and thermally activated delayed fluorescence at temperatures as high as 573 K. This long-lived PL is sensitized via the energy transfer from Ge defects to Si LCs, which provides PL lifetime tunability for GSO phosphors. The oxide scaffold of GSO offers 500-day materials stability in air; and 1-week stability in strong acidic and basic solutions. Using GSO/polymer hybrids, we demonstrated colour-tuned security tags whose emission wavelength and lifetime can be controlled via the excitation wavelength, and temperature, indicating promise in security applications.This work was supported by the National Natural Science Foundation of China (21905316, 22175201) and the Science and Technology Planning Project of Guangdong Province (2019A050510018). Z.Y. would like to acknowledge financial support from Sun Yat-sen University. M.W., J.A., S.T., and E.H.S. acknowledge the financial support from the Natural Sciences and Engineering Research Council (NSERC) of Canada. We thank Prof. B. Huang (Sun Yat-sen University) and Prof. B. Xu (South China Normal University) for their assistance with temperature-dependent PL studies. L. Wei is thanked for the figure design. The synchrotron studies were financially supported by the Natural Sciences and Engineering Research Council (NSERC) of Canada. This research used resources of the SGM (11ID-1) beamline at the Canadian Light Source. The authors thank Dr. Tom Regier and Dr. Jay Dynes from SGM beamline for the assistance in conducting XAS measurements

Abstract:

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in determining these densities. Here, we present a powerful approach to assess the defect densities, based on electric field mapping in working HaP-based solar cells. The minority carrier diffusion lengths were deduced from the electric field profile, measured by electron beam-induced current (EBIC). The EBIC method was used earlier to get the first direct evidence for the n-i-p junction structure, at the heart of efficient HaP-based PV cells, and later by us and others for further HaP studies. This manuscript includes EBIC results on illuminated cell cross sections (in operando) at several light intensities to compare optoelectronic characteristics of different cells made by different groups in several laboratories. We then apply a simple, effective single-level defect model that allows deriving the densities (N_r) of the defect acting as recombination center. We find N_r ≈ 1 × 10¹³ cm^-3 for mixed A cation lead bromide-based HaP films and ∼1 × 10¹⁴ cm^-3 for MAPbBr₃(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber.