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Abstract:

In this Letter, we demonstrate a planar n–i–p perovskite solar cell design with a steady-state efficiency of up to 18.8% in the absence of any electronic dopants. In the device stack, solution-processed SnO2 is used as an electron-accepting n-type layer. The absorber layer is a perovskite with both mixed organic A-site cations and mixed halides (FA0.83MA0.17Pb(I0.83Br0.17)3). The hole-transporting p-type layer is a double-layer structure of polymer-wrapped single-walled carbon nanotubes and undoped spiro-OMeTAD. We show that this approach can deliver steady-state efficiencies as high as and even higher than those of traditionally doped spiro-OMeTAD, providing a pathway for dopant-free perovskite solar cells crucial for long-term stability.

Abstract:

Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH2 )2 )0.83 Cs0.17 Pb(I0.6 Br0.4 )3 perovskite as the photoactive layer, glass-glass laminated devices are reported, which sustain 80% of their "post burn-in" efficiency over 3400 h under full sun illumination in ambient conditions.