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Abstract:

Inorganic perovskite quantum dots bear many unique properties that make them potential candidates for optoelectronic applications, including color display and lighting. However, the white emission with inorganic perovskite quantum dots has rarely been realized due to the anion-exchange reaction. Here, we proposed a one-pot preparation to fabricate inorganic perovskite quantum dot-based white light-emitting composites by introducing anthracene as a blue emission component. The as-prepared white light-emitting composite exhibited a photoluminescence quantum yield of 41.9%. By combining CsPb(Br/I)₃@anthracene composites with UV light-emitting device (LED) chips, white light-emitting devices with a color rendering index of 90 were realized with tunable color temperature from warm white to cool white. These results can promote the application of inorganic perovskite quantum dots in the field of white LEDs.

Abstract:

By controlling the hydrolysis of alkoxysilanes, highly luminescent, transparent and flexible perovskite quantum dot (QD) gels were synthesized. The gels could maintain the structure without shrinking and exhibited excellent stability comparing to the QDs in solution. This in situ fabrication can be easily scaled up for large-area/volume gels. The gels integrated the merits of the polymer matrices to avoid the non-uniformity of light output, making it convenient for practical LED applications. Monochrome and white LEDs were fabricated using these QD gels; the LEDs exhibited broader color gamut, demonstrating better property in the backlight display application.

Abstract:

The surface organic ligands of the quantum dots (QDs) play important roles in the performance of QD electronic devices. Here, we fabricated low toxic AgIn₅S₈/ZnS QDs light-emitting diodes (QD-LEDs) and greatly enhanced the device efficiency through surface ligand exchange treatments. The oleic acid-capped QDs were replaced with a shorter ligand 1,2-ethanedithiol, which was proved by the Fourier transform infrared spectrum measurement. The treated QD films became more compact with higher film mobility and shorter film photoluminescence lifetime. The more conductive QD films fabricated LEDs showed an external quantum efficiency over 1.52%.

Abstract:

The near-infrared light-emitting diodes using PbSe quantum dots were fabricated with the highest external quantum efficiency of 2.52%, which is comparable to those commercial InGaAsP LEDs and visible quantum dot electroluminescence LEDs.