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MicroPL optical setup

Professor Robert Taylor

Emeritus Professor of Condensed Matter Physics

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Quantum Optoelectronics
Robert.Taylor@physics.ox.ac.uk
Telephone: 01865 (2)72230
Clarendon Laboratory, room 164
  • About
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  • Publications

Lasing in perovskite nanocrystals

Image of transverse modes from lasing nanocrystals

TIME-RESOLVED EXCITON PHOTOLUMINESCENCE IN GASE AND GATE

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 20:36 (1987) 6175-6187

Authors:

RA TAYLOR, JF RYAN

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS

Surface Science 170:1-2 (1986) 511-519

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock

Abstract:

Picosecond time-resolved measurements of luminescence from hot carriers confined in GaAsGaAlAs multiple quantum wells show that energy loss rates are substantially slower than those predicted for 2D carriers. We review our recent experiments and present results for photoexcitation of (1) GaAs layers only, (2) both GaAs and GaAlAs layers. We compare the energy loss rates in samples with different well widths. Finally, we present measurements of hot 2D carrier relaxation in the presence of high magnetic fields; at low fields the energy loss rate is reduced, but for B > 9 T we observe a rapid increase. 漏 1986.

Time-resolved photoluminescence from hot two-dimensional carriers in GaAs-GaAlAs MQWS

Surface Science Letters Elsevier 170:1-2 (1986) a248

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock

TIME-RESOLVED PHOTOLUMINESCENCE FROM HOT TWO-DIMENSIONAL CARRIERS IN GAAS-GAALAS MQWS

SURFACE SCIENCE 170:1-2 (1986) 511-519

Authors:

JF RYAN, RA TAYLOR, AJ TURBERFIELD, JM WORLOCK

HOT ELECTRON RELAXATION AND TRAPPING IN MODULATION-DOPED GaAs/GaA1As MULTIPLE QUANTUM WELL HETEROSTRUCTURES.

(1985) 567-570

Authors:

JF Ryan, RA Taylor, AJ Turberfield, A Maciel, JM Worlock, AC Gossard, W Wiegmann

Abstract:

There is much current interest in determining the energy relaxation processes of hot carriers confined in quantum well heterostructures. We present measurements of time-resolved photoluminescence from hot carriers and from carrier recombination at shallow traps. The experimental technique is basically the same as described previously except that the laser (h upsilon //L equals 1. 76 eV) excites carriers only in the GaAs layers.

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