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MicroPL optical setup

Professor Robert Taylor

Emeritus Professor of Condensed Matter Physics

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Quantum Optoelectronics
Robert.Taylor@physics.ox.ac.uk
Telephone: 01865 (2)72230
Clarendon Laboratory, room 164
  • About
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  • Publications

Lasing in perovskite nanocrystals

Image of transverse modes from lasing nanocrystals

Temporal variation in photoluminescence from single InGaN quantum dots

Applied Physics Letters 84 (2005) 4110-4112

Authors:

RA Taylor, J. H. Rice, J.W. Robinson, A. Jarjour

Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

Applied Physics Letters 86:8 (2005) 1-3

Authors:

JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, TW Kang

Abstract:

We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs. 漏 2005 American Institute of Physics.

Luminescence properties of isolated InGaN/GaN quantum dots

Physica Status Solidi A Applications and Materials Science 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson

Abstract:

In x Ga 1-xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy, The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 渭eV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power. 漏 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers

2005 5th IEEE Conference on Nanotechnology 1 (2005) 393-396

Authors:

KH Lee, S Birner, JH Na, RA Taylor, JW Robinson, JH Rice, YS Park, CM Park, TW Kang

Abstract:

By means of a 3D self-consistent numerical simulation we have calculated the wavefunctions and energies of the states in an asymmetric GaN quantum disc (Q-disc) system. Overall, good agreement between the modeling and experimental results were observed. Furthermore, modeling has provided an insight into the carrier dynamics of the Q-disc system. In particular, results from the modeling supports the view that the nonlinear relationship between PL intensity and excitation power was due to electron tunneling between the asymmetric GaN Q-discs. 漏2005 IEEE.

Registration of single quantum dots for solid state cavity quantum electrodynamics

Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS 2005 (2005) 130-131

Authors:

KH Lee, AM Green, FSF Brossard, RA Taylor, AJ Turberfield, DA Williams, GAD Briggs

Abstract:

We discuss a novel technique to register the spatial and spectral characteristics of a single quantum dot using two photon absorption laser lithography. This would be useful in realizing solid state cavity quantum electrodynamics. 漏 2005 British Crown Copyright.

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