Temporal variation in photoluminescence from single InGaN quantum dots
Applied Physics Letters 84 (2005) 4110-4112
Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers
Applied Physics Letters 86:8 (2005) 1-3
Abstract:
We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs. 漏 2005 American Institute of Physics.Luminescence properties of isolated InGaN/GaN quantum dots
Physica Status Solidi A Applications and Materials Science 202:3 (2005) 372-376
Abstract:
InModeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
2005 5th IEEE Conference on Nanotechnology 1 (2005) 393-396
Abstract:
By means of a 3D self-consistent numerical simulation we have calculated the wavefunctions and energies of the states in an asymmetric GaN quantum disc (Q-disc) system. Overall, good agreement between the modeling and experimental results were observed. Furthermore, modeling has provided an insight into the carrier dynamics of the Q-disc system. In particular, results from the modeling supports the view that the nonlinear relationship between PL intensity and excitation power was due to electron tunneling between the asymmetric GaN Q-discs. 漏2005 IEEE.Registration of single quantum dots for solid state cavity quantum electrodynamics
Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS 2005 (2005) 130-131