Direct optical excitation of a fullerene-incarcerated metal ion
(2006)
The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy
Nanotechnology 17:3 (2006) 913-916
Abstract:
Magnesium-doped GaN nanorods were grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy. Time-integrated and time-resolved photoluminescence measurements were carried out to study the optical transitions. Two emission lines corresponding to blue emission at about 3.26 and 3.18 eV, with their corresponding phonon replicas, were observed. These peaks are attributed to conduction band to shallow acceptor transitions and to defects associated with column/substrate interface-shallow Mg acceptor complexes, respectively. © 2006 IOP Publishing Ltd.Accuracy of single quantum dot registration using cryogenic laser photolithography
Institute of Electrical and Electronics Engineers (IEEE) 2 (2006) 723-726
Accuracy of single quantum dot registration using cryogenic laser photolithography
2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 2 (2006) 723-726
Abstract:
We have registered the position of single InGaAs quantum dots using a novel cryogenic laser photolithography technique. This would be useful in realizing solid state cavity quantum electrodynamics. By fabricating metal alignment markers around the quantum dot, it was registered with an accuracy of 50 nm. Following the marker fabrication process we demonstrated that the same quantum dot was reacquired, with an accuracy of 150 nm. The photoluminescence spectra from the quantum dots before and after processing were identical except for a small red shift (∼1 nm), probably introduced during the reactive ion etching. © 2006 IEEE.Crystal-encapsulation-induced band-structure change in single-walled carbon nanotubes: Photoluminescence and Raman spectra
PHYSICAL REVIEW B 74:24 (2006) ARTN 245418