Professor Robert Taylor: Publications

Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy

NANOTECHNOLOGY 19:47 (2008) ARTN 475402

Authors:

Young S Park, Tae W Kang, RA Taylor

Electrically driven single InGaN/GaN quantum dot emission

APPLIED PHYSICS LETTERS 93:23 (2008) ARTN 233103

Authors:

Anas F Jarjour, Robert A Taylor, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, Abbes Tahraoui

Fabrication of Ultrathin Single-Crystal Diamond Membranes

ADVANCED MATERIALS 20:24 (2008) 4793-+

Authors:

Barbara A Fairchild, Paolo Olivero, Sergey Rubanov, Andrew D Greentree, Felix WaIdermann, Robert A Taylor, Ian Walmsley, Jason M Smith, Shane Huntington, Brant C Gibson, David N Jamieson, Steven Prawer

Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE

J KOREAN PHYS SOC 51 (2007) S220-S224

Authors:

DH Shin, MK Bae, SN Yi, JH Na, KH Lee, RA Taylor, SH Doh, SH Park

Abstract:

Selective area growth (SAG) of GaN by hydride vapor phase epitaxy (HVPE) has been performed on SiO2 stripe-mask-patterned Si(111) substrates with various buffer layers. AlGaN, GaN and AIN films were used as buffer layers. In order to grow selectively, the orientation of the SiO2 mask pattern was opened along the Si (110) direction. The properties of the SAG-GaN samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence(PL). SEM images show that hexagonal SAG-GaN grows vertically along the < 0001 > direction, longitudinally along the < 11 (2) over bar0 > direction with facets on the sidewall growing along the (1 (1) over bar 01) direction. It was found that the lateral-to-vertical growth ratio depended strongly on different buffer layers.

Configuration-selective spectroscopic studies of Er3+ centers in ErSc2N@C80 and Er2ScN@C80 fullerenes.

J Chem Phys 127:19 (2007) 194504

Authors:

Archana Tiwari, Geraldine Dantelle, Kyriakos Porfyrakis, Robert A Taylor, Andrew AR Watt, Arzhang Ardavan, G Andrew D Briggs

Abstract:

Low temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy of high purity ErSc(2)N@C(80) and Er(2)ScN@C(80) fullerenes reveal at least two metastable configurations of the Er(3+) ion within the cage, consistent with previous observations from x-ray diffraction. Using PLE measurements at a number of different emission wavelengths we have characterized the ground state, (4)I(152), and the first excited state, (4)I(132), of the various Er(3+) configurations and their crystal-field splitting. We present detailed energy level diagrams for the ground and excited states of the two dominant configurations of ErSc(2)N@C(80) and Er(2)ScN@C(80).

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