Optical properties of bulk-like GaN nanorods grown on Si (111) substrates by rf-plasma assisted molecular beam epitaxy
Physica Status Solidi C Current Topics in Solid State Physics 7:7-8 (2010) 2211-2213
Abstract:
We have investigated the optical properties of bulk-like GaN nanorods by cathodoluminescence measurements at room temperature. The bulk-like nanorods were grown on a Si (111) substrate by rf-plasma assisted molecular beam epitaxy and are characterized be being surrounded by a compact region. A weak and broad emission line near 3.36 eV was observed at an accelerating voltage of 5 kV. This emission occurs at a lower energy than the emission from unstrained GaN nanorods that protrude from the compact region. Upon increasing the electron beam energy, and hence investigating regions deeper in the sample, the peak emission energy redshifts due to the strain at the substrate interface. The behaviour of the emission line is further investigated with cathodoluminescence measurement on single nanorod's. 漏 2010 Wiley-VCH Verlag GmbH & Co. KGaA.Photoluminescence and electroluminescence in InGaN/GaN nano-rod array LEDs fabricated on a wafer scale
Optics Infobase Conference Papers (2010)
Abstract:
The fabrication of nano-rods containing InGaN/GaN quantum wells with diameter and the evolution of their optical properties are reported. A prototype nano-rod array LED device with strong photonic crystal effects in its electroluminescence is demonstrated. 漏 OSA / ANIC/SOLED 2010.Cavity Enhancement of Single Quantum Dot Emission in the Blue
NANOSCALE RESEARCH LETTERS 5:3 (2010) 608-612
Cavity modes of tapered ZnO nanowires
NEW JOURNAL OF PHYSICS 12 (2010) ARTN 083052
High Up-Conversion Efficiency of YVO4:Yb,Er Nanoparticles in Water down to the Single-Particle Level
JOURNAL OF PHYSICAL CHEMISTRY C 114:51 (2010) 22449-22454