Selective area epitaxy of InGaAs/InGaAsP quantum wells studied by magnetotransport
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 11:5 (1996) 735-740
The unifying role of effective field in the composite fermion model of the fractional quantum Hall effect
SURF SCI 362:1-3 (1996) 22-25
Abstract:
Fractional Quantum Hall Effect measurements in 50 T pulsed magnetic fields, are analysed in the Composite Fermion (CF) model. Energy gaps of all fractions in the principal series around nu=1/2 show a simple, sample independent, increase with the CF effective field following root B*. The spin polarised state at nu=5/3 follows exactly the same behaviour, but for mixed spin states like 4/3 the energy gap collapses when B*>1 T.Thermopower and conductivity of InAs/GaSb crossed-gap heterostructures in a magnetic field
PHYSICAL REVIEW B 54:8 (1996) 5684-5690
Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice
PHYSICAL REVIEW B 53:16 (1996) 10524-10527
Pressure investigation of the quantum Hall effect in intrinsic semimetallic InAs/(Ga,In)Sb heterostructures
J PHYS CHEM SOLIDS 56:3-4 (1995) 453-457