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Single trapped ion

Single trapped ion

Credit: David Nadlinger

David Lucas

Professor of Physics

Sub department

  • Atomic and Laser Physics

Research groups

  • Ion trap quantum computing
David.Lucas@physics.ox.ac.uk
Telephone: 01865 (2)72384,01865 (2)72346
Clarendon Laboratory, room -170,-172,-171,316.6
  • About
  • Publications

High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit

Physical Review Letters American Physical Society (APS) 113:22 (2014) 220501

Authors:

TP Harty, DTC Allcock, CJ Ballance, L Guidoni, HA Janacek, NM Linke, DN Stacey, DM Lucas

High-fidelity two-qubit quantum logic gates using trapped calcium-43 ions

(2014)

Authors:

CJ Ballance, TP Harty, NM Linke, DM Lucas

High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit

(2014)

Authors:

TP Harty, DTC Allcock, CJ Ballance, L Guidoni, HA Janacek, NM Linke, DN Stacey, DM Lucas

Microwave control electrodes for scalable, parallel, single-qubit operations in a surface-electrode ion trap

Applied Physics B: Lasers and Optics Springer Berlin Heidelberg 114:1-2 (2014) 3-10

Authors:

DPLA Craik, NM Linke, TP Harty, CJ Ballance, DM Lucas, AM Steane, DTC Allcock

Abstract:

We propose a surface ion trap design incorporating microwave control electrodes for near-field single-qubit control. The electrodes are arranged so as to provide arbitrary frequency, amplitude and polarization control of the microwave field in one trap zone, while a similar set of electrodes is used to null the residual microwave field in a neighbouring zone. The geometry is chosen to reduce the residual field to the 0.5% level without nulling fields; with nulling, the crosstalk may be kept close to the 0.01% level for realistic microwave amplitude and phase drift. Using standard photolithography and electroplating techniques, we have fabricated a proof-of-principle electrode array with two trapping zones. We discuss requirements for the microwave drive system and prospects for scalability to a large two-dimensional trap array.

Injection locking of two frequency-doubled lasers with 3.2 GHz offset for driving Raman transitions with low photon scattering in 43Ca+

Optics Letters 38:23 (2013) 5087-5089

Authors:

NM Linke, CJ Ballance, DM Lucas

Abstract:

We describe the injection locking of two infrared (794 nm) laser diodes that are each part of a frequency-doubled laser system. An acousto-optic modulator in the injection path gives an offset of 1.6 GHz between the lasers for driving Raman transitions between states in the hyperfine split (by 3.2 GHz) ground level of 43Ca+. The offset can be disabled for use in 40Ca+. We measure the relative linewidth of the frequency-doubled beams to be 42 mHz in an optical heterodyne measurement. The use of both injection locking and frequency doubling combines spectral purity with high optical power. Our scheme is applicable for providing Raman beams across other ion species and neutral atoms where coherent optical manipulation is required. 漏 2013 Optical Society of America.

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