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Abstract:

AuZn undergoes a shape-memory transition at 67 K. The de Haas-van Alphen effect persists to 100 K enabling the observation of a change in the quantum oscillation spectrum indicative of a catastrophic Fermi surface reconstruction at the transition. The coexistence of both Fermi surfaces at low temperatures suggests an intrinsic phase separation in the bulk of the material. In addition, Dingle analysis reveals a sharp change in the scattering mechanism at a threshold cyclotron radius, attributable to the underlying microstructure driving the shape-memory effect.

Abstract:

A finite transfer integral t(a) orthogonal to the conducting chains of a highly one-dimensional metal gives rise to empty and filled bands that simulate an indirect-gap semiconductor upon formation of a charge-density wave (CDW). In contrast to semiconductors such as Ge and Si with band gaps approximately 1 eV, the CDW system possesses an indirect gap with a greatly reduced energy scale, enabling moderate laboratory magnetic fields to have a major effect. The consequent variation of the thermodynamic gap with magnetic field due to Zeeman splitting and Landau quantization enables the electronic band structure parameters (transfer integrals, Fermi velocity) to be determined accurately. These parameters reveal the orbital quantization limit to be reached at approximately 20 T in (Per)2M(mnt)(2) salts, making them highly unlikely candidates for a recently proposed cascade of field-induced CDW states.

Abstract:

Martensites are materials that undergo diffusionless, solid-state transitions. The martensitic transition yields properties that depend on the history of the material and may allow it to recover its previous shape after plastic deformation. This is known as the shape-memory effect (SME). We have succeeded in identifying the primary electronic mechanism responsible for the martensitic transition in the shape-memory alloy AuZn by using Fermi-surface measurements (de Haas-van Alphen oscillations) and band-structure calculations. This strongly suggests that electronic band structure is an important consideration in the design of future SME alloys.

Abstract:

The angle dependences of the magnetoresistance of two different isotopic substitutions (deuterated and undeuterated) of the layered organic superconductor κ-(ET)2Cu(NCS)2 are presented (where ET is the organic molecule bis(ethylenedithio)-tetrathiafulvalene). The angle-dependent magnetoresistance oscillations (AMRO) arising from the quasi-one-dimensional and quasi-two-dimensional Fermi surfaces in this material are easily confused. By using the Boltzmann transport equation extensive simulations of the AMRO are made that reveal the subtle differences between the different species of oscillation. No significant differences are observed in the electronic parameters derived from quantum oscillations and AMRO for the two isotopic substitutions. The interlayer transfer integrals are determined for both isotopic substitutions and a slight difference is observed which may account for the negative isotope effect previously reported. The success of the semiclassical simulations suggests that non-Fermi liquid effects are not required to explain the interlayer transport in this system.