Prof Yulin Chen: Publications

A VUV sub-micron hotspot for photoemission spectroscopy

Vacuum ultraviolet (VUV) lasers have exhibited great potential as the light source for various spectroscopies, which, if they can be focused into a smaller beam spot, will not only allow investigation of mesoscopic materials but also find applications in manufacture of nano-objects with excellent precision. Towards this goal, scientists in China invented a 177 nm VUV laser system that can achieve a record-small (<1 μm) focal spot at a long focal length (~45 mm). This system can be re-equipped for usage in low-cost ARPES and might benefit quantum materials, condensed matter physics and nanophotonics.

Hierarchy of multiple many-body interaction scales in high-temperature superconductors

PHYSICAL REVIEW B 75:17 (2007) ARTN 174506

Authors:

W Meevasana, XJ Zhou, S Sahrakorpi, WS Lee, WL Yang, K Tanaka, N Mannella, T Yoshida, DH Lu, YL Chen, RH He, Hsin Lin, S Komiya, Y Ando, F Zhou, WX Ti, JW Xiong, ZX Zhao, T Sasagawa, T Kakeshita, K Fujita, S Uchida, H Eisaki, A Fujimori, Z Hussain, RS Markiewicz, A Bansil, N Nagaosa, J Zaanen, TP Devereaux, Z-X Shen

Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-$T_c$ Superconductor

Phys. Rev. Lett. American Physical Society 97 (2006) 236401-236401

Authors:

Yulin Chen, Akira Iyo, Wanli Yang, Xingjiang Zhou, Donghui Lu, Hiroshi Eisaki, Thomas P Devereaux, Zahid Hussain, Z-X Shen

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Chn. J. Lumin. Chinese Academy of Science 2001:3 (2001) 218

Authors:

Liu C. H., Zhu J. J., Lin B. X., Chen Y. L., Peng C., Yang Z., Fu Z. X

Electrical Properties of the ZnO/Si Heterostructure

Chinese Physics Letters 18:8 (2001) 1108

Abstract:

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.

The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology 12:9 (1997) 1140-1146

Authors:

GLB Houston, Y Chen, J Singleton, NJ Mason, PJ Walker

Abstract:

Extensive capacitance-voltage (C-V) and conductance-voltage (G-V) measurements have been performed on MIS devices on p-type GaSb at 77 K using an anodically grown oxide as the insulating layer. The C-V characteristics have been measured from 250 Hz to 800 kHz. The high-frequency C-V data and the G-V analysis are in good agreement and show that there is a high density of surface states (∼10¹³ cm^-2 eV^-1) which limits the movement of the surface potential to a region of approximately 1/4 of the bandgap. Hence neither accumulation nor inversion can be obtained.

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Prof Yulin Chen

Research theme

Sub department

Hierarchy of multiple many-body interaction scales in high-temperature superconductors

Authors:

Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-$T_c$ Superconductor

Authors:

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Authors:

Electrical Properties of the ZnO/Si Heterostructure

Abstract:

The interface properties of MIS structures on anodically oxidized GaSb

Authors:

Abstract:

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Prof Yulin Chen

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Hierarchy of multiple many-body interaction scales in high-temperature superconductors

Authors:

Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-$T_c$ Superconductor

Authors:

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Authors:

Electrical Properties of the ZnO/Si Heterostructure

Abstract:

The interface properties of MIS structures on anodically oxidized GaSb

Authors:

Abstract:

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